High-resolution transmission electron microscopy (HRTEM) observation of dislocation structures in A1N thin films

Journal of Materials Research

Volumn 23, Issue 8, 2008, Pages 2188-2194

  Tokumoto, Yuki ^a   Shibata, Naoya ^a,b   Mizoguchi, Teruyasu ^a   Sugiyama, Masakazu ^a   Shimogaki, Yukihiro ^a   Yang, Jung Seung ^a   Yamamoto, Takahisa ^a   Ikuhara, Yuichi ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BURGERS VECTOR; CORUNDUM; CRYSTAL GROWTH; ELECTRON MICROSCOPES; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; LIQUID PHASE EPITAXY; MATERIALS SCIENCE; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; THICK FILMS;

AIN FILMS; METAL-ORGANIC VAPOR PHASE EPITAXY; THIN FILMS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 50449086462     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0265     Document Type: Article

References (40)

1. S.D. Lester, F.A. Ponce, M.G. Craford, and D.A. Steigerwald: High dislocation densities in high efficiency GaN-based light-emitting diodes. Appl. Phys. Lett. 66, 1249 (1995).
2. F.R. Chien, X.J. Ning, S. Stemmer, P. Pirouz, M.D. Bremser, and R.F. Davis: Growth defects in GaN films on 6H-SiC substrates. Appl. Phys. Lett. 68, 2678 (1996).
3. 3, J. Appl. Phys. 80, 3228 (1996).
4. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, and J.S. Speck: Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films. Appl. Phys. Lett. 68, 643 (1996).
5. W. Qian, M. Skowronski, M. De Graef, K. Doverspike, L.B. Rowland, and D.K. Gaskill: Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy. Appl. Phys. Lett. 66, 1252 (1995).
6. X.J. Ning, F.R. Chien, P. Pirouz, J.W. Yang, and M. Asif Khan: Growth defects in GaN films on sapphire: The probable origin of threading dislocations. J. Mater. Res. 11, 580 (1996).
7. P. Fini, X.H. Wu, E.J. Tarsa, Y. Golan, V. Srikant, S. Keller, S.P. DenBaars, and J.S. Speck: The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition. Jpn. J. Appl. Phys. 37, 4460 (1998).
8. X.H. Wu, P. Fini, E.J. Tarsa, B. Heying, S. Keller, U.K. Mishra, S.P. DenBaars, and J.S. Speck: Dislocation generation in GaN heteroepitaxy. J. Cryst. Growth 189(190), 231 (1998).
9. T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L.T. Romano, and S. Sakai: Direct evidence that dislocations are non-radiative recombination centers in GaN. Jpn. J. Appl. Phys. 37, L398 (1998).
10. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda: Characterization of threading dislocations in GaN epitaxial layers. Appl. Phys. Lett. 76, 3421 (2000).
11. D. Cherns, S.J. Henley, and F.A. Ponce: Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence. Appl. Phys. Lett. 78, 2691 (2001).
12. N.G. Weimann, L.F. Eastman, D. Doppalapudi, H.M. Ng, and T.D. Moustakas: Scattering of electrons at threading dislocations in GaN. J. Appl. Phys. 83, 3656 (1998).
13. D.C. Look and J.R. Sizelove: Dislocation scattering in GaN. Phys. Rev. Lett. 82, 1237 (1999).
14. P. Waltereit, S.H. Lim, M. McLaurin, and J.S. Speck: Heteroepitaxial growth of GaN on 6H-SiC (0001) by plasma-assisted molecular-beam epitaxy. Phys. Status Solidi A 194, 524 (2002).
15. R.F. Davis, S. Einfeldt, E.A. Preble, A.M. Roskowski, Z.J. Reitmeier, and P.Q. Miraglia: Gallium nitride and related materials: Challenges in materials processing. Acta Mater. 51, 5961 (2003).
16. 3 (0001) interface. Phys. Rev. B 64, 195329 (2001).
17. Y.B. Kwon, J.H. Je, P. Ruterana, and G. Nouet: On the origin of a-type threading dislocations in GaN layers. J. Vac. Sci. Technol. A 23, 1588 (2005).
18. V. Potin, G. Nouet, P. Ruterana, and R.C. Pond: The atomic structure of threading dislocations from low-angle to high-angle grain boundaries in GaN/sapphire epitaxial layers. Phys. Status Solidi B 216, 645 (1999).
19. 3 heteroepitaxial growth by metalorganic vapor phase epitaxy. Jpn. J. Appl. Phys. 27, 1156 (1988).
20. [i#xN(0 < x ≤ 0.4) films grown on sapphire substrate by MOVPE. J. Cryst. Growth 98, 209 (1989).
21. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki: Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer. Phys. Status Solidi B 216, 683 (1999).
22. J.E. Northrup and J. Neugebauer: Theory of GaN (1010) and (1120) surfaces. Phys. Rev. B 53, R10477 (1996).
23. B. Xu, A.J. Lu, B.C. Pan, and Q.X. Yu: Atomic structures and mechanical properties of single-crystal GaN nanotubes. Phys. Rev. B 71, 125434 (2005).
24. Y. Xin, S.J. Pennycook, N.D. Browning, P.D. Nellist, S. Sivananthan, F. Omnès, B. Beaumont, J.P. Faurie, and P. Gibart: Direct observation of the core structures of threading dislocations in GaN. Appl. Phys. Lett. 72, 2680 (1998).
25. V. Potin, P. Ruterana, G. Nouet, R.C. Pond, and H. Morkoç: Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries. Phys. Rev. B 61, 5587 (2000).
26. F.C. Frank: Capillary equilibria of dislocated crystals. Acta Crystallogr. 4, 497 (1951).
27. W. Qian, G.S. Rohrer, M. Skowronski, K. Doverspike, L.B. Rowland, and D.K. Gaskill: Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy. Appl. Phys. Lett. 67, 2284 (1995).
28. D. Cherns, W.T. Young, J.W. Steeds, F.A. Ponce, and S. Nakamura: Observation of coreless dislocations in α-GaN. J. Cryst. Growth 178, 201 (1997).
29. 0.97N. Appl. Phys. Lett. 81, 4541 (2002).
30. I. Arslan and N.D. Browning: Role of oxygen at screw dislocations in GaN. Phys. Rev. Lett. 91, 165501 (2003).
31. D. Cherns and M.E. Hawkridge: Open core threading dislocations in GaN grown by hydride vapour phase epitaxy. Philos. Mag. 86, 4747 (2006).
32. J. Elsner, R. Jones, M. Haugk, R. Gutierrez, Th. Frauenheim, M.I. Heggie, S. Öberg, and P.R. Briddon: Effect of oxygen on the growth of (1010) GaN surfaces: The formation of nanopipes. Appl. Phys. Lett. 73, 3530 (1998).
33. J.E. Northrup: Screw dislocations in GaN: The Ga-filled core model. Appl. Phys. Lett. 78, 2288 (2001).
34. F.C. Frank: Crystal dislocations. Elementary concepts and definitions. Philos. Mag., 7th Ser. 42, 809 (1951).
35. V. Srikant, J.S. Speck, and D.R. Clarke: Mosaic structure in epitaxial thin films having large lattice mismatch. J. Appl. Phys. 82, 4286 (1997).
36. T. Metzger, R. Höpler, E. Born, O. Ambacher, M. Stutzmann, R. Stömmer, M. Schuster, H. Göbel, S. Christiansen, M. Albrecht, and H.P. Strunk: Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis x-ray diffractometry. Philos. Mag. A 77, 1013 (1998).
37. Z.T. Chen, K. Xu, L.P. Guo, Z.J. Yang, Y.Y. Su, X.L. Yang, Y.B. Pan, B. Shen, H. Zhang, and G.Y. Zhang: Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition. J. Cryst. Growth 294, 156 (2006).
38. 3 interfaces fabricated by pulsed laser deposition. J. Mater. Sci. 41, 2553 (2006).
39. 3(0001) interface. J. Ceram. Soc. Japan 114, 1018 (2006).
40. 3 interface grown by molecular beam epitaxy. Philos. Mag. A 70, 75 (1994).