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Volumn 86, Issue 29-31, 2006, Pages 4747-4756
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Open core threading dislocations in GaN grown by hydride vapour phase epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
DOPING (ADDITIVES);
ELECTRON ENERGY LOSS SPECTROSCOPY;
ELECTRONIC PROPERTIES;
GALLIUM NITRIDE;
IMPURITIES;
SEGREGATION (METALLOGRAPHY);
VAPOR PHASE EPITAXY;
ELECTRICAL DOPANTS;
GROWTH INHIBITORS;
HIGH-RESOLUTION IMAGING;
DISLOCATIONS (CRYSTALS);
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EID: 33746848489
PISSN: 14786435
EISSN: 14786443
Source Type: Journal
DOI: 10.1080/14786430600690481 Document Type: Article |
Times cited : (15)
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References (21)
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