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Volumn 86, Issue 29-31, 2006, Pages 4747-4756

Open core threading dislocations in GaN grown by hydride vapour phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; IMPURITIES; SEGREGATION (METALLOGRAPHY); VAPOR PHASE EPITAXY;

EID: 33746848489     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430600690481     Document Type: Article
Times cited : (15)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.