The atomic structure of threading dislocations from low-angle to high-angle grain boundaries in GaN/sapphire epitaxial layers

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 645-648

  Potin, V ^a   Nouet, G ^a   Ruterana, P ^a   Pond, R C ^b  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033243013     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<645::AID-PSSB645>3.0.CO;2-C     Document Type: Article

References (11)

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