Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 294, Issue 2, 2006, Pages 156-161

  Chen, Z T ^a,b   Xu, K ^a,b   Guo, L P ^c   Yang, Z J ^a,b   Su, Y Y ^a,b   Yang, X L ^a,b   Pan, Y B ^a,b   Shen, B ^a,b   Zhang, H ^a   Zhang, G Y ^a,b  

^a PEKING UNIVERSITY   (China)

^b PKU   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

A1. Rocking curve; A1. Stresses; A1. Threading dislocation; B1. GaN thin films

Indexed keywords

DISLOCATIONS (CRYSTALS); FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; X RAY DIFFRACTION;

GAN THIN FILMS; ROCKING CURVE; THREADING DISLOCATION;

THIN FILMS;

EID: 33947126033     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.085     Document Type: Article

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