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Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 683-689

Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer

(7) Amano, H a Iwaya, M a Hayashi, N a Kashima, T a Nitta, S a Wetzel, C a Akasaki, I a

a MEIJO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033229238 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO;2-4 Document Type: Article

Times cited : (95)

References (13)

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