Analysis of electrical properties of insulators (Si3N 4, SiO2, AlN, and Al2O3)/0.5 nm Si3N4/AlGaN/GaN heterostructures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2712-2715

  Maeda, Narihiko ^a   Hiroki, Masanobu ^a   Watanabe, Noriyuki ^a   Oda, Yasuhiro ^a   Yokoyama, Haruki ^a   Yagi, Takuma ^b   Makimoto, Toshiki ^c   Enoki, Takatomo ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

^c NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; ELECTRICAL PROPERTIES; NITRIDE SEMICONDUCTORS;

ALUMINUM; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; GALLIUM NITRIDE; NITRIDES; SEMICONDUCTOR MATERIALS; SILICON;

ELECTRIC NETWORK ANALYSIS;

EID: 49749100054     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674796     Document Type: Conference Paper

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