Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1368-1372

  Ewing, D J ^a   Derenge, M A ^a   Shah, P B ^a   Lee, U ^a   Zheleva, T S ^a   Jones, K A ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; CURRENT-VOLTAGE MEASUREMENTS; DISLOCATION DENSITIES; ELECTRICAL CHARACTERISTICS; GAN EPITAXIAL FILMS; IDEALITY FACTORS; LEAKAGE CURRENT DENSITIES; MATERIAL DEFECTS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; REVERSE LEAKAGE CURRENT; SCHOTTKY DIODES;

CRYSTAL GROWTH; CRYSTALS; CURRENT DENSITY; DIODES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; THERMOELECTRIC POWER;

EPITAXIAL FILMS;

EID: 49749097961     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2953724     Document Type: Article

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