Thermal distributions of surface states causing the current collapse in unpassivated AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Oh, C S ^a   Youn, C J ^a   Yang, G M ^a   Lim, K Y ^a   Yang, J W ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRONIC EQUIPMENT; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SPECTROSCOPIC ANALYSIS; SURFACE STRUCTURE;

POWER DENSITY; SURFACE PASSIVATION; THERMAL DISTRIBUTION; THERMAL EMISSION;

FIELD EFFECT TRANSISTORS;

EID: 19744382833     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844610     Document Type: Article

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