Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7611-7615

  Miller, E J ^a   Schaadt, D M ^a   Yu, E T ^a   Sun, X L ^b   Brillson, L J ^b   Waltereit, P ^c   Speck, J S ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SCANNING AUGER SPECTROSCOPY; SCHOTTKY CONTACTS;

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES;

GALLIUM NITRIDE;

EID: 0346935201     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1627460     Document Type: Article

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