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IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 535-537

Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance

(2) Vertiatchikh, Alexei V a Eastman, Lester F a

a Cornell University (United States)

Author keywords

AlGaN GaN; High electron mobility transistor (HEMT); Leakage current; Low frequency noise measurement; Passivation

Indexed keywords

COMPOSITION EFFECTS; DEFECTS; GALLIUM NITRIDE; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SPURIOUS SIGNAL NOISE; SURFACE PROPERTIES;

BARRIER DEFECTS; HOOGE LAW; LOW FREQUENCY NOISE PERFORMANCE; PARASITIC LEAKAGE CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0141452971 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/LED.2003.816588 Document Type: Letter

Times cited : (78)

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