Effect of threading dislocations on carrier mobility in AlGaN/GaN quantum wells

Journal of Physics Condensed Matter

Volumn 20, Issue 32, 2008, Pages

  Carosella, F ^a,b   Farvacque, J L ^a  

^a UNIV LILLE   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CARRIER MOBILITY; CHARGE DENSITY; DEFORMATION; EDGE DISLOCATIONS; ELECTRIC FIELDS; ENERGY GAP; GALLIUM NITRIDE; III-V SEMICONDUCTORS; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS;

DEFORMATION POTENTIAL; DISLOCATION SCATTERING; INTRINSIC SCATTERING; LOW CARRIER DENSITY; PIEZOELECTRIC COUPLINGS; SCATTERING MECHANISMS; SCATTERING POTENTIALS; THREADING DISLOCATION;

SINGLE CRYSTALS;

EID: 49049109447     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/32/325210     Document Type: Article

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