Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 383-386

  Cordier, Y ^a   Hugues, M ^a   Semond, F ^a   Natali, F ^a   Lorenzini, P ^a   Bougrioua, Z ^a   Massies, J ^a   Frayssinet, E ^b   Beaumont, B ^b   Gibart, P ^b   Faurie, J P ^b  

^a CRHEA CNRS   (France)

^b LUMILOG   (France)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B3. High electron mobility transistors

Indexed keywords

ALUMINUM NITRIDE; AMMONIA; ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; GALLIUM NITRIDE; HALL EFFECT; MOLECULAR BEAM EPITAXY; SAPPHIRE; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; ELECTRON TRANSPORT; INSULATING PROPERTIES; SATURATED VELOCITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 21044444152     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.037     Document Type: Conference Paper

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