Extended defects in GaN films grown at high growth rate

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13269-13275

  Valcheva, E ^a   Paskova, T ^b   Monemar, B ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; CRYSTALLOGRAPHY; FILM GROWTH; INTERFACES (MATERIALS); SAPPHIRE; VAPOR PHASE EPITAXY;

CRYSTAL QUALITY; HYDRIDE VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 0037122176     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/377     Document Type: Article

References (10)

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