Free carrier mobility in AlGaN/GaN quantum wells

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13319-13328

  Farvacque, J L ^a   Bougrioua, Z ^b   Carosella, F ^a   Moerman, I ^c  

^a UNIV LILLE   (France)

^b CHREA CNRS   (France)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; WURTZITE NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037122078     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/384     Document Type: Article

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