Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 479-483

  Soltanovich, O A ^a   Yakimov, E B ^a   Shmidt, N M ^b   Usikov, A S ^b   Lundin, W V ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Diffusion length; DLTS; EBIC; GaN

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; EPITAXIAL GROWTH; LASERS; LIGHT EMITTING DIODES; SAPPHIRE;

ELECTRON BEAM INDUCED CURRENT (EBIC); SPATIAL DISTRIBUTION;

GALLIUM NITRIDE;

EID: 0347946887     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.039     Document Type: Conference Paper

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