Defects and nucleation of GaN layers on (0001) sapphire

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13019-13023

  Degave, F ^a   Ruterana, P ^a   Nouet, G ^a   Je, J H ^b   Kim, C C ^b  

^a CNRS   (France)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); LOW TEMPERATURE PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; RELAXATION PROCESSES; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

LOW TEMPERATURE NUCLEATION; WURTZITE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037122181     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/346     Document Type: Article

References (7)

1. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamaha Y, Matsushita T, Kiyoku H and Sugimoto Y 1996 Japan. J. Appl. Phys. 2 53 L74
2. Nakamura S, Senoh, M, Nagahama S, Iwasa N, Yamaha Y, Matsushita, T, Sugimoto Y and Kiyoku N 1997 Appl. Phys. Lett. 70 1417
3. Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Appl. Phys. Lett. 48 353
4. Briot O, Alexis J P, Tchounkeu M and Olombard R L 1997 Mater. Sci. Eng. B 43 147
5. Jesson D E, Chen K M and Pennycook S J 1996 MRS Bull. 21 31
6. Degave F, Ruterana P, Nouet G, Je J H and Kim C C 2002 Mater. Sci. Eng. B 93 177
7. Cheng L, Zhou K, Zhang Z, Zhang G, Yang Z and Tong Y 1999 Appl. Phys. Lett. 74 661