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Volumn 18, Issue 14, 2008, Pages 2102-2113

Doping molecular monolayers: Effects on electrical transport through alkyl chains on silicon

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; SILICON;

EID: 48849091441     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200800208     Document Type: Article
Times cited : (30)

References (56)
  • 32
    • 48849084862 scopus 로고    scopus 로고
    • We will denote thermionic emission over the Schottky barrier as TE and the barrier to thermionic emission as the Schottky barrier.
    • We will denote thermionic emission over the Schottky barrier as "TE" and the barrier to thermionic emission as the Schottky barrier.
  • 44
    • 48849099404 scopus 로고    scopus 로고
    • Our understanding of the doping process is rather rudimentary, at this moment. The results of further investigation, which were and are done to evaluate more accurately the density of irradiated-induced defects and the kinetics of the process, will be reported elsewhere Ref. 36
    • Our understanding of the doping process is rather rudimentary, at this moment. The results of further investigation, which were and are done to evaluate more accurately the density of irradiated-induced defects and the kinetics of the process, will be reported elsewhere (Ref. 36).
  • 48
    • 48849096534 scopus 로고    scopus 로고
    • The case of Poole-Frenkel emission will not be considered here since this mechanism is a particular case of hopping conduction with a low density of impurities/defects in the layer
    • The case of Poole-Frenkel emission will not be considered here since this mechanism is a particular case of hopping conduction with a low density of impurities/defects in the layer.
  • 54
    • 48849113471 scopus 로고    scopus 로고
    • We use for this analysis the derivative, dJ/dV, instead of J/V so as to avoid the voltage dependence due to the voltage drop in the semi-conductor. The plot with J/V as the Y-axis, is given in the Supporting Information Fig. S2
    • We use for this analysis the derivative, dJ/dV, instead of J/V so as to avoid the voltage dependence due to the voltage drop in the semi-conductor. The plot with J/V as the Y-axis, is given in the Supporting Information (Fig. S2).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.