Temperature-dependent electronic transport through alkyl chain monolayers: Evidence for a molecular signature

Journal of Physical Chemistry C

Volumn 112, Issue 10, 2008, Pages 3969-3974

  Salomon, Adi ^a,b   Shpaisman, Hagay ^a   Seitz, Oliver ^a   Boecking, Till ^c,d   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b UNIVERSITÉ LOUIS PASTEUR   (France)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

^d HARVARD MEDICAL SCHOOL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED MOLECULES; ALKYL CHAINS; AMERICAN CHEMICAL SOCIETY (ACS); ELECTRONIC TRANSPORTS; HIGH REPRODUCIBILITY; MOLECULAR SIGNATURES; TEMPERATURE DEPENDENCES; TEMPERATURE DEPENDENT; TRANSPORT MEASUREMENTS; TUNNEL BARRIERS;

ELECTRON ENERGY LEVELS; SILICON;

ALKYLATION;

EID: 47249105120     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp710985b     Document Type: Article

References (69)

1. Salomon, A.; Cahen, D.; Lindsay, S.; Tomfohr, J.; Engelkes, V.; Frisbie, C. D. Adv. Mater. 2003, 15, 1881-1890.
2. Zhu, X.-Y. Surf. Sci. Rep. 2004, 56, 1-83.
3. Segev, L.; Salomon, A.; Natan, A.; Cahen, D.; Kronik, L.; Amy, F.; Chan, C. K.; Kahn, A. Phys. Rev. B 2006, 74, 165353/1-165353/6.
4. Salomon, A.; Boecking, T.; Gooding, J.; Cahen, D. Nano Lett. 2006, 6, 2873-2876.
5. Salomon, A.; Boecking, T.; Chan, C. K.; Amy, F.; Girshevitz, O.; Cahen, D.; Kahn, A. Phys. Rev. Lett. 2005, 95, 266807/1-266807/4.
6. Seitz, O.; Boecking, T.; Salomon, A.; Gooding, J. J.; Cahen. D. Langmuir 2006, 22, 6915-6922.
7. Tunneling through the Schottky barrier would occur only at strong reverse bias, a voltage regime not accessed and studied here.
8. Nesher, G.; Shpaisman, H.; Cahen, D. J. Am. Chem. Soc. 2007, 129, 734-735.
9. Nesher, G.; Vilan, A.; Cohen, H.; Cahen, D. J. Phys. Chem. B 2006, 110, 14363-71.
10. A change in GaAs surface pre-treatment yields data that are even closer to those obtained for the Si systems (see ref 9).
11. Shpaisman, H.; et al. To be published.
12. Thieblemont, F.; Seitz, O.; Cahen, D., in preparation.
13. Eves, B. J.; Sun, Q. Y.; Lopinski, G. P.; Zuilhof, H. J. Am. Chem. Soc. 2004, 126, 14318-14319.
14. Mischki, T. K.; Donkers, R. L.; Eves, B. J.; Lopinski, G. P.; Wayner, D. D. M. Langmuir 2006, 22, 8359-8365.
15. Kobayashi, M. J. Chem. Phys. 1978, 68, 145-151.
16. Naselli, C.; Rabolt. J. F.; Swalen, J. D. J. Chem. Phys. 1985, 82. 2136-2140.
17. Seki, K.; Sato, N.; Inokuchi, H. Chem. Phys. 1993, 178, 207-214.
18. Ueno, N.; Sugita, K.; Kiyono. S. Chem. Phys. Lett. 1981, 82, 296-300.
19. Ulman, A. Chem. Rev. 1996, 96, 1533-1554.
20. Bensebaa, F.; Ellis, T. H.; Badia, A.; Lennox, R. B. Langmuir 1998, 14, 2361-2367.
21. Sloutskin, E.; Sirota, E. B.; Hraack, H.; Ocko, B. M.; Deutsch, M. Phys. Rev. E 2001, 64, 031708-1-12.
22. Cohen, S. R.; Naaman, R.; Sagiv, J. J. Phys. Chem. 1986, 90, 3054-3056.
23. Hautman, J.; Klein, M. L. J. Chem. Phys. 1990, 93, 7483-7492.
24. Zhang, L.; Wesley, K.; Jiang, S. Langmuir 2001, 17, 6275-6281.
25. Maroncelli, M.; Qi, S. P.; Strauss, H. L.; Snyder, R. G. J. Am. Chem. Soc. 1982, 104, 6237-6247.
26. 140 °C for alkylsilanes (ref 22); ∼60 °C for Si-C bound alkyl chains, based on our experimental IR and transport data.
27. Schelling, P. K.; Keblinski, P. Phys. Rev. B 2003, 68, 035425.
28. Troisi, A.; Ratner, M. A. Nano Lett. 2004, 4, 591-595.
29. Ratner, M. A. J. Phys. Chem. 1990, 94, 4877-4883.
30. Nitzan, A. Chemical Dynamics in Condensed Phases, 1st ed.; Oxford University Press: New York, 2006.
31. Kronshev, A. A.; Kuznetsov, A. M.; Ulstrup, J. Proc. Natl. Acad. Sci 2006, 103, 6799-6804.
32. Skourtis, S.; Nitzan, A. J. Chem. Phys. 2003, 119, 6271-6276.
33. Slowinski, K.; Chamberlin, R. V.; Miller, C. J.; Majda, M. J. Am. Chem. Soc. 1997, 119, 11910-11919.
34. Wang, W. Y.; Lee, T.; Reed, M. A. Phys. Rev. B 2003, 68, 035416.
35. Chen, F.; Li, X. L.; Hihath, J.; Huang, Z. F.; Tao, N. J. J. Am. Chem. Soc. 2006, 128, 15874-15881.
36. Guerin, D.; Merckling, C.; Lenfant, S.; Wallart, X.; Pleutin, S.; Vuillaume, D. J. Phys. Chem. C 2007, 11, 7947-7956.
37. Khoshtariya, D. E.; Liu, J. H.; Yue, H.; Waldeck, D. H. J. Am. Chem. Soc. 2003, 125, 7704-7714.
38. Haiss, W.; Wang, C.; Crace, I.; Batsanov, A. S.; Schiffrim, D. J.; Higgins, S. J.; Bryce, M. R.; Lambert, C. J.; Nichols, R. J. Nat. Mater. 2006, 5, 995-1002.
39. Haiss, W.; Zalinge, H. V.; Bethell, D.; Ulstrup, J.; Schiffirn, D. J.; Nichols, R. J. Faraday Discuss. 2006, 131, 253-264.
40. According to ref 3, the electrode states can penetrate until the 4th carbon in the chain.
41. Boecking, T.; Salomon, A.; Cahen, D.; Gooding, J. J. Langmuir 2007, 23, 3236-3241.
42. Linford, M. R.; Fenter, P.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc. 1995, 117, 3145-3155.
43. Haick, H.; Ambrico, M.; Ghabboun, J.; Ligonzo, T.; Cahen, D. PhysChemChemPhys 2004, 6, 4538-4541.
44. Tran, E.; Duati, M.; Ferri, V.; Mullen, K.; Zharnikov, M.; Whitesides, G. M.; Rampi, M. A. Adv. Mater. 2006, 18, 1323-1328.
45. Sze, S. M. Physics of Semiconductor Devices, second ed.; Wiley: New York, 1981.
46. Green, M. A.; King, F. D.; Shewchun, J. Solid-State Electron. 1974, 17, 551-561.
47. Salomon, A.; Boecking, T.; Seitz, O.; Markus, T.; Amy, F.; Chan, C. K.; Cahen, D.; Kahn, A. Adv. Mater. 2007, 19, 445-450.
48. Simmons, J. G. J. Phys. D 1971, 4, 613-657.
49. Very similar behavior, with comparable deviation points, was obtained with n-GaAs-alkylphosphonate monolayer/Hg junctions, also confirming the quality and reliability of those junctions (see ref 8).
50. Salomon, A., Ph.D. thesis, Weizmann Institute of Science, Rehovot, 2007.
51. Selzer, Y.; Cabassi, M. A.; Mayer, T. S.; Allara, D. L. Nanotechnology 2004, 75, S483-S488.
52. The effective dielectric constant changes by 10-15% over this temperature range (ref 53), insufficient to explain by itself the observed temperature dependence.
53. Agarwal, V. K.; Sharma, A. K.; Kumar, P. J. Chem. Eng. Data 1977, 22, 127-130.
54. The reason for the linearity of the plots at higher bias is discussed elsewhere (ref 50).
55. The same behaviour was observed with other molecular junctions having different metallic top contact and different molecular length.
56. 2 relates to the fact that tunneling is temperature-independent only to a first approximation. The actual temperature dependence is due to the change in the electrode's electronic carrier density around the Fermi level (near the conduction band minimum or valence band maximum for a semiconductor) and in the electrode's Fermi level position with temperature (see also refs 50, 48).
57. Haran, A.; Waldeck, D. H.; Naaman, R.; Moons, E.; Cahen, D. Science 1994, 263, 948-950.
58. Slowinski, K.; Majda, M. J. Electroanal. Chem. 2000, 491, 139-147.
59. Karplus, M.; Evenson, J. W. Science 1993, 262, 1247-1249.
60. Beratan, D. N.; Betts, J. N.; Nelson Onuchic, J. J. Phys. Chem. 1992, 96, 2852-2855.
61. Betts, J. N.; Beratan, D. N.; Onuchic, J. N. J. Am. Chem. Soc. 1992, 114, 4043-4046.
62. Beratan, D. N.; Onuchic, J.; Hopfield, J. J. J. Chem. Phys. 1987, 86, 4488-4498.
63. Gray, H. B.; Winkler, J. R. Proc. Natl. Acad. Sci. 2005, 102, 3534-3539.
64. "End-gauche" defects are thought to be the dominant ones. Therefore, we expect to decrease the density of gauche defects by restraining molecules at both their ends.
65. Similar results were obtained with Au and Pd top contacts.
66. McGuiness, C. L.; Shaporenko, A.; Mars, C. K.; Uppili, S.; Zharnikov, M.; Allara, D. L. J. Am. Chem. Soc. 2006, 128, 5231-5243.
67. Skourtis, S. S.; Balabin, I. A.; Kawatsu, T.; Beratan, D. N. Proc. Natl. Acad. Sci. 2005, 102, 3552-3557.
68. Prytkova, T. R.; Kurnikov, I. V.; Beratan, D. N. Science 2007, 315, 622-625.
69. Seitz, O.; Vilan, A.; Cohen, H.; Chan, C.; Hwang, J.; Kahn, A.; Cahen, D. J. Am. Chem. Soc. 2007, 129, 7494-7495.