Pt/Ga2O3/SiC MRISiC devices: A study of the hydrogen response

Journal of Physics D: Applied Physics

Volumn 38, Issue 5, 2005, Pages 754-763

  Trinchi, A ^a,b   Wlodarski, W ^a,b   Li, Y X ^c   Faglia, G ^d   Sberveglieri, G ^d  

^a RMIT UNIVERSITY   (Australia)

^b CAST Cooperative Research Centre   (Australia)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

^d UNIVERSITY OF BRESCIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; ELECTRIC INSULATORS; ELECTRON ENERGY LEVELS; HYDROGEN; IONS; OXYGEN; PASSIVATION; PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

AMBIENT GASES; INTERFACE STATES; METAL REACTIVE INSU;LATOR-SILICON CARBIDE (MRISIC); OPERATING TEMPERATURE;

MOS DEVICES;

EID: 15544367354     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/5/014     Document Type: Article

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