Reactively sputtered InxVyOz films for detection of NOx, D2, and O2

Sensors and Actuators, B: Chemical

Volumn 123, Issue 2, 2007, Pages 779-783

  Ali, M ^a   Cimalla, V ^a   Lebedev, V ^a   Stauden, Th ^a   Wang, Ch ^a   Ecke, G ^a   Tilak, V ^b   Sandvik, P ^b   Ambacher, O ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

4H SiC FET; Deuterium; Indium oxide; Response; Vanadium oxide

Indexed keywords

CHEMICAL SENSORS; DEUTERIUM; FIELD EFFECT TRANSISTORS; INDIUM COMPOUNDS; NITROGEN OXIDES; REACTIVE SPUTTERING; SILICON CARBIDE;

4H-SIC FIELD EFFECT TRANSISTORS; GAS CONCENTRATIONS; INDIUM OXIDE; VANADIUM OXIDE;

THIN FILMS;

EID: 34247558009     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2006.10.018     Document Type: Article

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