Interface States in High Temperature SiC Gas Sensing

Proceedings of IEEE Sensors

Volumn 1, Issue 2, 2002, Pages 1120-1125

  Ghosh, Ruby N ^a   Tobias, Peter ^a   Ejakov, Sally G ^a   Golding, Brage ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

Interface states; Sensor; SiC; Silicon carbide

Indexed keywords

DIPOLE LAYERS; INTERFACE STATES;

ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

CHEMICAL SENSORS;

EID: 1542318444     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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