Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 5, 2003, Pages 1567-1577

  Lee, Sungjae ^a   Webb, Kevin J ^a   Tilak, Vinayak ^b,c   Eastman, Lester F ^b  

^a PURDUE UNIVERSITY   (United States)

^b Cornell University   (United States)

^c GENERAL ELECTRIC COMPANY   (United States)

Author keywords

Correlation; Leakage currents; Semiconductor device noise; Shot noise; White noise

Indexed keywords

GALLIUM NITRIDE; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SHOT NOISE; WHITE NOISE;

SEMICONDUCTOR DEVICE NOISES;

TRANSISTORS;

EID: 0038056178     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.810140     Document Type: Article

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