Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 2, 2005, Pages 762-768

  Sanabria, Christopher ^a   Xu, Hongtao ^a   Palacios, Tomás ^a   Chakraborty, Arpan ^a   Heikman, Sten ^a   Mishra, Umesh K ^a   York, Robert A ^a  

^a University of California   (United States)

Author keywords

AlGaN; GaN; High electron mobility transistor (HEMT); Noise figure; Pospieszalski; Pucel; Van der Ziel

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; MATHEMATICAL MODELS; NATURAL FREQUENCIES; SIGNAL PROCESSING; SPURIOUS SIGNAL NOISE;

ALGAN; GAN; NOISE FIGURE; POSPIESZALSKI; PUCEL; VAN DER ZIEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 14544300937     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.840578     Document Type: Conference Paper

References (29)

1. W. Lu, V. Kumar, R. Schwindt, E. Finer, and I. Adesida, "DC, RF, and microwave noise performance of AlGaN/GaN HEMTs on aluminum concentration," IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 2499-2503, Apr. 2003.
2. J. S. Moon, M. Micovic, A. Kurdoghlian, P. Janke, P. Hashimoto, W.-S. Wong, L. McCray, and C. Nguyen, "Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation," IEEE Electron Device Lett., vol. 23, no. 11, pp. 637-639, Nov. 2002.
3. W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, "DC, RF, and microwave noise performance of AlGaN/GaN HEMTs on sapphire substrates," IEEE Trans. Microw. Theory Tech., vol. 50, no. 11, pp. 2499-2503, Nov. 2002.
4. A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, and U. K. Mishra, "12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate," IEEE Electron. Lett., vol. 40, no. 1, pp. 73-74, Jan. 2004.
5. A. T. Ping, E. Piner, J. Redwing, M. A. Khan, and I. Adesida, "Microwave noise performance of AlGaN/GaN HEMTs," Electron. Lett., vol. 36, pp. 175-176, Jan. 2000.
6. N. X. Nguyen, M. Micovic, W.-S. Wong, P. Hashimoto, P. Janke, D. Harvey, and C. Nguyen, "Robust low microwave noise GaN MODFETs with 0.6 dB noise figure at 10 GHz," IEEE Electron. Lett., vol. 36, no. 3, pp. 469-471, Mar. 2000.
7. J.-W. Lee, V. Kumar, R. Schwindt, A. Kuliev, R. Birkhahn, D. Gotthold, and S. Guo, "Microwave noise performances of AlGaN/GaN HEMT's on semi-insulating 6H-SiC substrates," Electron. Lett., vol. 40, pp. 80-81, Jan. 2004.
8. S. S. H. Hsu and D. Pavlidis, "Low noise AlGaN/GaN MODFET's with high breakdown and power characteristics," in 23rd Annu. Gallium Arsenide Integrated Circuit Symp. Tech. Dig., Oct. 2001, pp. 229-232.
9. xGai-aAs HEMT's," IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 2081-2083, Sep. 1998.
10. H. Kawasaki, T. Shino, M. Kawano, and K. Kamei, "Super low noise AlGaAs/GaAs HEMT with one tenth micron gate," in IEEE MTT-S Int. Microwave Symp. Dig., Jun. 13-15, 1989, pp. 423-426.
11. J.-H. Lee, H.-S. Yoon, C.-S. Park, and P. Hyung-Moo, "Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate," IEEE Electron Device Lett., vol. 16, no. 6, pp. 271-273, Jun. 1995.
12. C. S. Whelan, P. F. Marsh, W. E. Hoke, R. A. McTaggart, C. P. McCarroll, and T. E. Kazior, "GaAs metamorphic HEMT (MHEMT): An attractive alternative to InP HEMT's for high performance low noise and power applications," in Proc. Indium Phosphide and Related Materials Conf., May 14-18, 2000, pp. 337-340.
13. 52As 0.1-μm MODFETS and high-gain/bandwidth three-stage amplifier fabricated on GaAs substrate," presented at the 7th Int. Indium Phosphide and Related Materials Conf., May 1995.
14. M.-Y. Kao, K. H. G. Duh, P. Ho, and P.-C. Chao, "An extremely low-noise InP-based HEMT with silicon nitride passivation," in Int. Electron Devices Meeting Tech. Dig., Dec. 11-14, 1994, pp. 907-910.
15. Y. Ando, A. Cappy, K. Marubashi, K. Onda, H. Miyamoto, and M. Kuzuhara, "Noise parameter modeling for InP-based pseudomorphic HEMTs," IEEE Trans. Electron Devices, vol. 44, pp. 1367-1374, Sep. 1997.
16. H. C. Duran, B.-U. H. Klepser, and W. Bachtold, "Low-noise properties of dry gate recess etched InP HEMT's," IEEE Electron Device Lett., vol. 17, no. 10, pp. 482-484, Oct. 1996.
17. 0.4 n-MODFET,"presented at the Elsevier Solid-State Electronics Conf., Feb. 2003.
18. L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttair, P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/AlN/GaN high-power microwave HEMT," IEEE Electron Device Lett., vol. 22, no. 10, pp. 457-459, Oct. 2001.
19. P. H. Ladbrooke, MMIC Design: GaAs FET's and HEMTs. Boston, MA: Artech House, 1989.
20. H. Rothe and W. Dahlke, "Theory of noisy fourpoles," in Proc. IRE, vol. 44, Jun. 1956, pp. 811-818.
21. M. Berroth and R. Bosch, "Broad-band determination of the FET small-signal equivalent circuit," IEEE Trans. Microw. Theory Tech., vol. 38, no. 7, pp. 891-895, Jul. 1990.
22. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microw. Theory Tech., vol. 36, no. 7, pp. 1151-1159, Jul. 1988.
23. H. Morkoç and L. Lianghong, "GaN-based modulation-doped FET's and heterojunction bipolar transistors," in Nitride Semiconductors: Handbook on Materials and Devices, P. Ruterana, M. Albrecht, and J. Neugebauer, Eds. Berlin, Germany: Wiley-VCH, 2003, pp. 608-613.
24. R. A. Pucel, H. A. Haus, and H. Statz, "Signal and noise properties of gallium arsenide microwave field-effect transistors," Adv. Electron. Electron Phys., vol. 38, pp. 195-265, 1975.
25. A. Van Der Ziel, "Gate noise in field effect transistors at moderately high frequencies," Proc. IEEE, vol. 51, no. 3, pp. 461-467, Mar. 1963.
26. H. Hillbrand and P. Russer, "An efficient method for computer-aided noise analysis of linear amplifier networks," IEEE Trans. Circuits Syst., vol. CAS-23, no. 4, pp. 235-238, Apr. 1976.
27. S. Lee, V. Tilak, K. J. Webb, and L. Eastman, "Intrinsic noise characteristics of AlGaN/GaN HEMTs," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, Jun. 2002, pp. 1415-1418.
28. S. Lee, K. J. Webb, V. Tilak, and L. Eastman, "Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs," IEEE Trans. Microw. Theory Tech., vol. 51, no. 5, pp. 1567-1577, May 2003.
29. M. W. Pospiezalski, "Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence," IEEE Trans. Microw. Theory Tech., vol. 37, no. 9, pp. 1340-1350, Sep. 1989.