280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations

Electronics Letters

Volumn 41, Issue 18, 2005, Pages 1004-1005

  Wakejima, A ^a   Matsunaga, K ^a   Okamoto, Y ^a   Ando, Y ^a   Nakayama, T ^a   Kasahara, K ^a   Miyamoto, H ^a  

^a R&D Association for Future Electron Devices   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; CODE DIVISION MULTIPLE ACCESS; ELECTRIC POTENTIAL; GALLIUM COMPOUNDS;

CELLULAR BASE-STATION SYSTEMS; DRAIN VOLTAGE; LINEAR GAIN; SATURATED OUTPUT POWER;

POWER AMPLIFIERS;

EID: 25444511379     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052513     Document Type: Article

References (9)

1. Mishra, U.K., Parikh, P., and Wu, Y.-R: 'AlGaN-GaN HEMTs: an overview of device operation and application', Proc. IEEE, 2002, 90, (6), pp. 1022-1031
2. Ando, Y., et al.: '110-W AlGaN-GaN heterojunction FET on thinned sapphire substrate'. IEEE IEDM Tech. Dig., Washington D.C., USA, December 2001, pp. 381-384
3. Eastman, L.F.: 'Experimental power-frequency limits of AlGaN-GaN HEMT's'. IEEE MTT-S Dig., Seattle, WA, USA, July 2002, pp. 2273-2275
4. Pribble, W.L., et al.: 'Application of SiC MESFETs and GaN HEMTs in power amplifier design'. IEEE MTT-S Dig., Seattle, WA, USA, July 2002, pp.1819-1822
5. Okamoto, Y., et al.: 'Improved power performance for a recessed-gate AlGaN-GaN hetero-junction FET with a field-modulating plate', IEEE Trans. Microw. Theory Tech., 2004, 39, pp. 1474-475
6. Kikkawa, T., et al.: 'High-power and high efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage'. IEEE RFIC Symp. Dig., Philadelphia, PA, USA, June 2003, pp. 167-170
7. Nagy, W., et al.: ' 150 W GaN-on-Si RF power transistor', to be published in IEEE MTT-S Int. Micron. Symp. Dig., June 2005, WE1E-1
8. Takenaka, I., et al.: 'A 240 W power heterojunction FET with high efficiency for W-CDMA base stations'. IEEE Microwave Symp. Dig., May 2001, pp. 645-648
9. Brech, H., et al.: 'Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base stations'. Electron Devices Meeting, December 2003, pp. 15.1.1-15.1.4