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Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

Bulk GaN and AlGaNGaN heterostructure drift velocity measurements and comparison to theoretical models

(4) Barker, J M a Ferry, D K a Koleske, D D b Shul, R J b

a Arizona State University (United States)

b SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRIFT VELOCITY MEASUREMENTS; ELECTRON VELOCITY; NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC); NONEQUILIBRIUM PHONONS;

CARRIER CONCENTRATION; DIFFUSION; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; EPITAXIAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHONONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; VELOCITY MEASUREMENT;

HETEROJUNCTIONS;

EID: 20644455339 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1854724 Document Type: Article

Times cited : (81)

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