Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InNAlN double-buffer layers

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 587-591

  Li, Zhen Yu ^a   Lan, Shan Ming ^b   Uen, Wu Yih ^c   Chen, Ying Ru ^b   Chen, Meng Chu ^b   Huang, Yu Hsiang ^b   Ku, Chien Te ^b   Liao, Sen Mao ^c   Yang, Tsun Neng ^b   Wang, Shing Chung ^a   Chi, Gou Chung ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC TEMPERATURE; ATMOSPHERICS; BUFFER LAYERS; EPILAYERS; EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; INDUSTRIAL CHEMICALS; ION BEAM ASSISTED DEPOSITION; LIGHT EMISSION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LUMINESCENCE; METALLIZING; METALLORGANIC VAPOR PHASE EPITAXY; METALS; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; PRESSURE; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; VAPORS; X RAY DIFFRACTION ANALYSIS;

(P ,P ,T) MEASUREMENTS; BAND TO BAND TRANSITIONS; EPI LAYERS; EXCITATION INTENSITIES; HALF MAXIMUM; HIGH TEMPERATURE (HT); INDIUM NITRIDE (INN); METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); PHOTOLUMINESCENCE (PL); PL MECHANISM; RECOMBINATION LIFETIME; ROOM-TEMPERATURE (RT); SI (111); SI(2 1 1) SUBSTRATES; STRONG EMISSION; TIME-RESOLVED; X RAY DIFFRACTION (XRD);

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 46449132243     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2929849     Document Type: Article

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