Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 77-84

  Lu, Yuan ^a   Liu, Xianglin ^a   Lu, Da Cheng ^a   Yuan, Hairong ^a   Chen, Zhen ^a   Fan, Tiwen ^a   Li, Yufeng ^a   Han, Peide ^a   Wang, Xiaohui ^a   Wang, Du ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Substrates; A3. Heteroepitaxy; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; WETTING; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROEPITAXY; NITRIDATION; WETTING LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036499092     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02163-7     Document Type: Article

References (14)