A comparative study of OMVPE-grown InN heteroepitaxial layers on GaAs(1 1 1)B and α-Al2O3(0 0 0 1) substrates

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 641-646

  Yamamoto, A ^a   Yamauchi, Y ^a   Ohkubo, M ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

GaAs(1 1 1)B; Heteroepitaxy; ; InN; Nitridation; OMVPE; Al2O3(0 0 0 1)

Indexed keywords

ALUMINA; CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS;

HETEROEPITAXY; NITRIDATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031547230     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00057-2     Document Type: Article

References (8)

1. I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike, Jpn. J. Appl. Phys. 34 (1995) L1517.
2. A. Yamamoto, Y. Yamauchi, T. Ogawa, M. Ohkubo and A. Hashimoto, Silicon Carbide and Related Materials, Inst. Phys. Conf. Ser. No. 142 (1995) p. 879.
3. A. Yamamoto, Y. Yamauchi, M. Ohkubo and A. Hashimoto, Abstract of the Topical Workshop on III-V Nitrides, B-9 (1995).
4. S. Strite, D. Chandrasekhar, D.J. Smith, J. Sariel, H. Chen, N. Teraguchi and H. Morkoc, J. Crystal Growth 127 (1993) 204.
5. A. Yamamoto, M. Tsujino, M. Ohkubo and A. Hashimoto, J. Crystal Growth 137 (1994) 415.
6. H. Okumura, S. Misawa and S. Yoshida, Appl. Phys. Lett. 59 (1991) 1058.
7. S. Miyoshi, K. Onabe, N. Ohkouchi, H. Yaguchi, R. Ito, S. Fukatsu and Y. Shiraki, J. Crystal Growth 124 (1992) 439.
8. K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi and K. Oki, J. Crystal Growth 115 (1991) 628.