MOVPE InN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111)

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2281-2284

  Yamamoto, A ^a   Kobayashi, T ^a   Yamauchi, T ^a   Sasase, M ^b   Hashimoto, A ^a   Ito, Y ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; POLYCRYSTALLINE MATERIALS; SILICON; SILICON WAFERS;

CRYSTALLINE QUALITY; INN FILMS; POLYCRYSTALLINE SIC;

INDIUM COMPOUNDS;

EID: 27344447865     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461421     Document Type: Conference Paper

References (4)

1. A. Yamamoto, M. Tsujino, M. Ohkubo, and A. Hashimoto, J. Cryst. Growth 137, 415 (1994).
2. A. Yamamoto T. Yamauchi, T. Tanikawa, M. Sasase, B.K. Ghosh, A. Hashimoto, and Y. Ito, J. Cryst. Growth 261, 266 (2004).
3. A. Yamamoto, K. Ikuta, Y. Murakami, T. Yamauchi, A. Hashimoto, and Y. Ito, phys. stat. sol. (c) 0, No. 1, 152 (2002).
4. T. Ive, Brandt, M. Ramsteiner, M. Giehler, H. Kostial, and K. Ploog, Appl. Phys. Lett. 84, 1671 (2004).