High efficiency InGaP/InGaAs tandem solar cells on Ge substrates

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 976-981

  Takamoto, Tatsuya ^a   Agui, Takaaki ^a   Ikeda, Eiji ^a   Kurita, Hiroshi ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM; GALLIUM ARSENIDE; GERMANIUM; SEMICONDUCTING GALLIUM; SOLAR CELLS; SUBSTRATES;

HIGH-EFFICIENCY; HIGHER EFFICIENCY; IMPROVING EFFICIENCY; IN COMPOSITIONS; LATTICE-MATCHED; MAXIMUM EFFICIENCY; TANDEM SOLAR CELLS; TRIPLE JUNCTION CELLS;

EFFICIENCY;

EID: 84883153196     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916049     Document Type: Conference Paper

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