Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited in layer and a two-step growth method

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 701-705

  Chang, K J ^a   Chang, J Y ^a   Chen, M C ^b   Lahn, S M ^b   Kao, C J ^c   Li, Z Y ^d   Uen, W Y ^d   Chi, G C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c NATIONAL SPACE ORGANIZATION   (Taiwan)

^d CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM COMPOUNDS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SURFACE MORPHOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

PREDEPOSITION; ROOM TEMPERATURE;

THIN FILMS;

EID: 34547353412     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2740293     Document Type: Article

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