Characterization of MOVPE-grown InN layers on α-Al2O3 and GaAs substrates

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 461-465

  Yamamoto, Akio ^a   Shin ya, Tomohiro ^a   Sugiura, Toshimitsu ^a   Hashimoto, Akihiro ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

Carrier density; GaAs; Hall mobility; InN; MOVPE; RHEED; Al2O3

Indexed keywords

ALUMINA; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

HALL MOBILITY; WURTZITE STRUCTURE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032092810     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00331-5     Document Type: Article

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