Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

Applied Physics Letters

Volumn 70, Issue 12, 1997, Pages 1566-1568

  Yamaguchi, Masafumi ^a   Okuda, Takeshi ^a,c   Taylor, Stephen J ^a   Takamoto, Tatsuya ^a,d   Ikeda, Eiji ^b   Kurita, Hiroshi ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b Japan Energy   (Japan)

^c AICHI STEEL CORPORATION   (Japan)

^d JAPAN ENERGY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001387101     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118618     Document Type: Article

References (10)

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7. 0 was assumed to be the same for all cells, as was indeed the case for devices processed from the same wafer.
8. Within the operating temperature range for space solar cells.
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10. D. V. Lang, L. C. Kimerling, and S. Y. Leung, J. Appl. Phys. 47, 3587 (1976).