Room-temperature time-resolved photoluminescence studies of UV emission from GaN/AlN quantum wells

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 689-694

  Furis, Madalina ^a   Chen, Fei ^a   Cartwright, Alexander N ^a   Wu, Hong ^b   Schaff, William J ^b  

^a State University of New York ^*  (United States)

^b School of Chemical and Molecular Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; ULTRAVIOLET RADIATION;

BUILT IN PIEZOELECTRIC FIELD; INFRARED LIGHT EMITTERS; ROOM TEMPERATURE TIME RESOLVED PHOTOLUMINESCENCE; SPONTANEOUS POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038033915     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l11.14     Document Type: Conference Paper

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