Experimental and theoretical studies on N 1s levels of silicon oxynitride films

Surface Science

Volumn 518, Issue 1-2, 2002, Pages 72-80

  Takahashi, Masao ^a   Mizokuro, Toshiko ^a   Nishioka, Yasushiro ^b   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Texas Instruments Japan Ltd   (Japan)

Author keywords

Compound formation; Density functional calculations; Insulating films; Photoelectron spectroscopy; Silicon; Silicon nitride; Silicon oxides; X ray photoelectron spectroscopy

Indexed keywords

ATOMS; CHEMICAL BONDS; FILMS; NITRIDING; NITROGEN; PROBABILITY DENSITY FUNCTION; SILICON; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

INSULATING FILMS;

SURFACE CHEMISTRY;

EID: 0037057527     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02096-4     Document Type: Article

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