Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 907-912

  Pan, Tung Ming ^a,b   Lei, Tan Fu ^a,b   Wen, Huang Chun ^b   Chao, Tien Sheng ^a,c  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

N 2O; NH 3; Nitridation; Oxynitride; Rapid thermal annealing (RTA); Si 3N 4

Indexed keywords

NITRIDATION; ULTRATHIN OXYNITRIDE GATE DIELECTRICS;

LEAKAGE CURRENTS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON;

ULTRATHIN FILMS;

EID: 0035340573     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918238     Document Type: Article

References (22)