Study on oxynitride buffer layers in HfO2 metal-insulator- semiconductor structures for improving metal-insulator-semiconductor field-effect transistor performance

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1698-1703

  Ota, Hiroyuki ^a   Yasuda, Naoki ^a,c   Yasuda, Tetsuji ^a   Morita, Yukinori ^a   Miyata, Noriyuki ^a   Tominaga, Koji ^a,d   Kadoshima, Masaru ^a   Migita, Shinji ^a   Nabatame, Toshihide ^a   Toriumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d HORIBA LTD   (Japan)

Author keywords

Buffer layer; HfO2; High k dielectrics; Mobility; Nitridation, oxynitridation

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; OXIDATION;

BUFFER LAYERS; HFO2; HIGH-K DIELECTRICS; MOBILITY; NITRIDATION; OXYNITRIDATION;

MIS DEVICES;

EID: 21244437962     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1698     Document Type: Article

References (11)

1. The International Technology Roadmap for Semiconductors 2004 Update (Int. SEMATECH, 2004).
2. R. Choi, C. S. Kang, B. H. Lee, K. Onishi, R. Nieh, S. Gopalan, E. Dharmarajan and J. C. Lee: Proc. of VLSI Symp., 2001, p. 15.
3. C. H. Lee, H. F. Luan, W. P. Bai, S. J. Lee, T. S. Jeon, Y. Senzaki, D. Roberts and D. L. Kwong: Tech. Dig. Int. Electron Device Meet., 2000, p. 27.
4. K. Sekine, S. Inumiya, M. Sato, A. Kaneko, K. Eguchi and Y. Tsushima: Tech. Dig. Int. Electron Device Meet., 2003, p. 103.
5. D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, S. Inumiya, K. Eguchi and M. Takayanagi: Proc. VLSI Symp., 2004, p. 172.
6. H. Ota, N. Yasuda, T. Yasuda, Y. Morita, N. Miyata, K. Tominaga, M. Kadoshima, S. Migita, T. Nabatame and A. Toriumi: Ext. Abstr. 2002 Int. Conf. Solid State Devices and Materials, 2002 (Business Center for Accademic Society Japan, Tokyo, 2002) p, 30.
7. N. Yasuda, K. Muraoka, M. Koike and H. Satake: Ext. Abstr. 2001 Int. Conf. Solid State Devices and Materials, 2001 (Business Center for Accademic Society Japan, Tokyo, 2001) p. 486.
8. N. Yasuda and H. Satake: Ext. Abstr. 2001 Int. Conf. on Solid State Devices and Materials, 2001 (Business Center for Accademic Society Japan, Tokyo, 2001) p. 202.
9. M. Fukuda, W. Mizubayashi, A. Kohno, S. Miyazaki and M. Hirose: Jpn. J. Appl. Phys. 37 (1998) L1534.
10. S. Takagi and A. Toriumi: IEEE Trans. on Electron Devices 42 (1995) 2125.
11. F. Stern and W. E. Howard: Phys. Rev. 163 (1967) 816.