Novel fabrication process for HfO2 thin film for gate dielectric

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1665-1668

  Nagasato, Yoshitaka ^a   Ueno, Tomo ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Equivalent oxide thickness; Gate dielectric; HfO2; High k dielectric; Metal sputtering; Postoxidation

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; MOSFET DEVICES; OXIDATION; SILICA; SPUTTERING; THERMODYNAMIC STABILITY; ULTRAHIGH VACUUM;

EQUIVALENT OXIDE THICKNESS; GATE DIELECTRIC; HFO2; HIGH-K DIELECTRIC; METAL SPUTTERING; POSTOXIDATION;

THIN FILMS;

EID: 21244466757     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1665     Document Type: Article

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