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Journal of the Electrochemical Society

Volumn 155, Issue 7, 2008, Pages

Triangular extended microtunnels in gan prepared by selective crystallographic wet chemical etching

(7) Huang, Hsin Hsiung a,b Wu, Pei Lun a Zeng, Hung Yu a Liu, Po Chun b Chi, Tung Wei b Tsay, Jenq Dar b Lee, Wei I a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM NITRIDE; WET ETCHING;

EPITAXIAL LATERAL OVERGROWTH STRUCTURES; ETCHING RATE; MICROTUNNELS;

THICK FILMS;

EID: 44349124148 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2913151 Document Type: Article

Times cited : (5)

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