Cl2-based dry etching of GaN and InGaN using inductively coupled plasma the effects of gas additives

Journal of the Electrochemical Society

Volumn 147, Issue 5, 2000, Pages 1859-1863

  Lee, Ji Myon ^a   Chang, Ki Myung ^a   Lee, In Hwan ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ARGON; CHLORINE; DIELECTRIC MATERIALS; HYDROGEN; METHANE; MORPHOLOGY; PLASMAS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS;

ETCH RATE; INDUCTIVELY COUPLED PLASMA; MICROMASKING; SIDEWALL MORPHOLOGY;

DRY ETCHING;

EID: 0033728981     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393447     Document Type: Article

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