High quality GaN grown from a nanoporous GaN template

Journal of the Electrochemical Society

Volumn 154, Issue 12, 2007, Pages

  Hartono, H ^a   Soh, C B ^b   Chua, S J ^a,b   Fitzgerald, E A ^a,c,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c Massachusetts Institute of Technology Cambridge   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTROCHEMICAL ETCHING; FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOPORES; PHONONS; PHOTOLUMINESCENCE; SURFACE ROUGHNESS;

ALLOYS GROWTH; PHOTOLUMINESCENCE INTENSITIES; POROUS GALLIUM NITRIDE; UV ENHANCED ELECTROCHEMICAL ETCHING;

GALLIUM NITRIDE;

EID: 35548947064     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2792344     Document Type: Article

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