Electrodeless wet etching of GaN assisted with chopped ultraviolet light

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3759-3761

  Hwang, Z H ^a   Hwang, J M ^a   Hwang, H L ^a   Hung, W H ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTROCHEMISTRY; ELECTRON MOBILITY; ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; HOLE MOBILITY; IRRADIATION; MORPHOLOGY; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

ELECTRODELESS WET ETCHING; PHOTOELECTROCHEMICAL (PEC) ETCHING; PHOTOEXCITATION; RECOMBINATION CURRENTS;

GALLIUM NITRIDE;

EID: 2942552927     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1737799     Document Type: Article

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