Bias-induced spatially resolved growth and removal of Si-oxide by atomic force microscopy

Applied Physics A: Materials Science and Processing

Volumn 76, Issue 1, 2003, Pages 63-69

  Myhra, S ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH FROM MELT; DIELECTRIC PROPERTIES; DIFFUSION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; IMAGE ANALYSIS; IONS; REMOVAL; SILICON; SUBSTRATES; THICKNESS MEASUREMENT;

BIAS-INDUCED SPATIALLY RESOLVED GROWTH; DIELECTRIC BREAKDOWN; IONIC DIFFUSION; THERMALLY GROWN OXIDE LAYER;

OXIDES;

EID: 0037225220     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390201301     Document Type: Article

References (25)

1. J.A. Dagata, J. Schneir, H.H. Harary, C.J. Evans, M.T. Postek, J. Bennet: Appl. Phys. Lett. 56, 2001 (1990)
2. T.C. Chen, C. Wang, J.W. Lyding, J.R. Tucker: Appl. Phys. Lett. 66, 976 (1995)
3. E.S. Snow, P.M. Campbell: Appl. Phys. Lett. 64, 1932 (1994)
4. T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen, L. Ley: Appl. Phys. Lett. 67, 3144 (1995)
5. M.P. Murrell, M.E. Welland, S.J. O'Shea, T.M.H. Wong, J. R Barnes, A.W. McKinnon, M. Hayns, S. Verhaverbeke: Appl. Phys. Lett. 62, 786 (1993)
6. S.J. O'Shea, R.M. Atta, M.P. Murrell, M.E. Welland: J. Vac. Sci. Technol. B 13, 1945 (1995)
7. P. Avouris, T. Hertel, R. Martel: Appl. Phys. Lett. 71, 285 (1997)
8. T. Yasue, H. Koyama, T. Kato, T. Nishioka: J. Vac. Sci. Technol. B 15, 614 (1997)
9. N. Cabrera, N.F. Mott: Rep. Prog. Phys. 12, 163 (1949)
10. D. Stiévenard, P.A. Fontaine, E. Dubois: Appl. Phys. Lett. 70, 3272 (1997)
11. A.E. Gordon, R.T. Fayfield, D.D. Litfin, T.K. Higman: J. Vac. Sci. Technol. B 13, 2805 (1995)
12. F. Pérez-Murano, G. Abadal, N. Barniol, X. Aymerich, J. Servat, P. Gorostiza, F. Sanz: J. Appl. Phys. 78, 7697 (1995)
13. J. Servat, P. Gorostiza, F. Sanz, F. Pérez-Murano, N. Barniol, G. Abadal, X. Aymerich: J. Vac. Sci. Technol. A 14, 1208 (1996)
14. P.A. Fontaine, E. Dubois, D. Stiévenard: J. Appl. Phys. 84, 1776 (1998)
15. B. Legrand, D. Stiévenard: Appl. Phys. Lett. 74, 4049 (1999)
16. P.C. Turner, C.F. Jones, S. Myhra, F.B. Neall, D.K. Pham, R.S.C. Smart: Dissolution Mechanisms of Oxides and Titanate Ceramics - Electron Microscope and Surface Analytical Studies. In Surfaces and Interfaces of Ceramic Materials, ed. by L.C. Dufour, C. Monty (Kluwer, Dordrecht 1989)
17. S.R. Morrison: Electrochemistry at Semiconductor and Oxidized Metal Electrodes, 2nd edn. (Plenum, New York 1984)
18. F. Reniers: In-depth Analysis: Methods for Depth Profiling. In Handbook of Surface and Interface Analysis, ed. by J.C. Rivière, S. Myhra (Dekker, New York 1998)
19. C.J. Sofield, A.M. Stoneham: Semicond. Sci. Technol. 10, 215 (1999)
20. A. Paul: Chemistry of Glasses (Chapman & Hall, London 1982)
21. Y. Hibi, Y. Enomoto: Tribol. Int. 28, 97 (1995)
22. S. Jahanmir (Ed.): Friction and Wear of Ceramics (Dekker, New York 1994)
23. P. Vettiger, J. Brugger, M. Despont, U. Dreschler, U. Dürig, W. Häberle, M. Lutwyche, H. Rothuizen, R. Stutz, R. Widmer, G. Binnig: Microelectron. Eng. 46, 11 (1999)
24. G. Binnig, M. Despont, U. Dreschler, W. Häberle, M. Lutwyche, P. Vettiger, H.J. Mamin, B.W. Chui, T.W. Kenny: Appl. Phys. Lett. 74, 1329 (1999)
25. Y. Fukano, K. Hontani, T. Uchihashi, T. Okusako, A. Chayahara, Y. Sugawara, Y. Yamanishi, T. Oasa, S. Morita: Jpn. J. Appl. Phys. 33, 3756 (1994)