Topographical modification of silicon oxide using a conducting atomic-force microscope

Proceedings of the IEEE Conference on Nanotechnology

Volumn 2001-January, Issue , 2001, Pages 162-167

  Kremmer, S ^a   Teichert, C ^a   Kuchar, F ^a  

^a UNIVERSITY OF LEOBEN   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GATES (TRANSISTOR); NANOTECHNOLOGY; SILICON OXIDES;

DIFFERENT MECHANISMS; ELECTRICAL CHARACTERISTIC; FOWLER-NORDHEIM TUNNELING ANALYSIS; INDUCED OXIDATIONS; OXIDATION MECHANISMS; SILICON GATE OXIDE; THERMALLY GROWN OXIDE; TOPOGRAPHICAL MODIFICATIONS;

OXIDATION;

EID: 84949234300     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2001.966412     Document Type: Conference Paper

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