Density variations in scanned probe oxidation

Applied Surface Science

Volumn 158, Issue 3, 2000, Pages 205-216

  Morimoto, K ^a   Pérez Murano, Francesc ^b   Dagata, J A ^c  

^a PANASONIC CORPORATION   (Japan)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (SPECIFIC GRAVITY); DEPOSITION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; OXIDES; PROBES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DENSITY VARIATION; MOLAR VOLUME RATIO; SCANNED PROBE MICROSCOPY; TOTAL OXIDE THICKNESS;

OXIDATION;

EID: 0342918647     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00017-9     Document Type: Article

References (22)

1. Dagata J.A., Schneir J., Harary H.H., Evans C.J., Postek M.T., Bennett J. Appl. Phys. Lett. 56:1990;2001.
2. Dagata J.A. Science. 270:1995;1625. and references therein.
3. Snow E.S., Park D., Campbell P.M. Appl. Phys. Lett. 69:1996;269.
4. Matsumoto K., Ishii M., Segawa K., Oka Y., Vartanian B.J., Harris J.S. Appl. Phys. Lett. 68:1996;34.
5. Morimoto K., Araki K., Yamashita Y., Morita K., Niwa M. Appl. Surf. Sci. 117/118:1997;652.
6. Abadal G., Boisen A., Davis A.J., Hanson O., Grey F. Appl. Phys. Lett. 74:1999;3206.
7. Dagata J.A., Inoue T., Itho J., Yokoyama H. Appl. Phys. Lett. 73:1998;271.
8. Dagata J.A., Inoue T., Itho J., Matsumoto K., Yokoyama H. J. Appl. Phys. 84:1998;6891.
9. Pérez-Murano F., Birkelun K., Morimoto K., Dagata J.A. Appl. Phys. Lett. 75:1999;199.
10. Matsumoto K., Gotoh Y., Maeda T., Dagata J.A., Harris J.S. Jpn. J. Appl. Phys. 34:1999;477.
11. Fromhold T. Jr. Diggle J.W., Vijh A.K. Oxides and Oxide Films. Vol. 3:1976;1 Marcel Dekker, New York.
12. Avouris P., Hertel T., Martel R. Appl. Phys. Lett. 71:1997;287.
13. Day H.C., Allee D.R. Appl. Phys. Lett. 62:1993;2691.
14. Uhlig H.H. Acta Metall. 4:1956;541.
15. D.R. Wolters, A.T.A. Zegers-van Duynhoven, J. Appl. Phys. 65 (1989) 5126 and 5134. [We are indebted to E. Dubois for pointing out this article to us following the publication of Refs. [7,8]].
16. Stievenard D., Fontaine P.A., Dubois E. Appl. Phys. Lett. 70:1997;3272.
17. Snow E.S., Campbell P.M. Appl. Phys. Lett. 64:1994;1932.
18. Teuschler T., Mahr K., Miyazaki S., Hundhausen M., Ley L. Appl. Phys. Lett. 67:1995;3144.
19. Rigo S., Barbottin G., Vapailler A. Instabilities in Silicon Devices. Vol. 1:1986;North Holland, Amsterdam. Chap. 1.
20. Rosenbaum E., Liu Z., Hu C. IEEE Trans. Electron Devices. 40:1993;2287.
21. Maria D.J., Cartier E., Arnold D. J. Appl. Phys. 73:1993;3367.
22. Poindexter E.H., Young C.F., Gerardi G.J. Garfunkel E., Gusev E., Vul' A. Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. 1998;Kluwer, Dordrecht.