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Volumn 15, Issue 3, 1997, Pages 614-617

I-V characteristics of modified silicon surface using scanning probe microscopy

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OXIDATION; SCANNING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE TREATMENT;

EID: 0031139773     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589302     Document Type: Article
Times cited : (19)

References (15)
  • 8
    • 85088075505 scopus 로고    scopus 로고
    • NanoScope III head from Digital Instruments, Inc.
    • 8NanoScope III head from Digital Instruments, Inc.
  • 10
    • 5544285285 scopus 로고    scopus 로고
    • Nano Probes™ from Digital Instruments, Inc.
    • Nano Probes™ from Digital Instruments, Inc.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.