|
Volumn 15, Issue 3, 1997, Pages 614-617
|
I-V characteristics of modified silicon surface using scanning probe microscopy
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC FIELD EFFECTS;
ELECTRIC PROPERTIES;
ELECTRIC VARIABLES MEASUREMENT;
ELECTRON TUNNELING;
LEAKAGE CURRENTS;
MATHEMATICAL MODELS;
OXIDATION;
SCANNING;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE STRUCTURES;
SURFACE TREATMENT;
FIELD INDUCED OXIDATION;
FOWLER-NORDHEIM TUNNELING CURRENT MODEL;
SCANNING PROBE MICROSCOPY;
PROBES;
|
EID: 0031139773
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.589302 Document Type: Article |
Times cited : (19)
|
References (15)
|