Electrical characterization and fabrication of SiO2 based metal-oxide-semiconductor nanoelectronic devices with atomic force microscopy

Nanotechnology

Volumn 14, Issue 6, 2003, Pages 584-587

  Porti, M ^a   Blasco, X ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON DEVICES; MICROELECTRONICS; NANOTECHNOLOGY; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; THICK FILMS;

DIELECTRIC BREAKDOWN; GATE DIELECTRICS; NANOELECTRONIC DEVICES; THERMAL GATE OXIDES;

MOS DEVICES;

EID: 0037805111     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/6/303     Document Type: Article

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