SCOPUS 정보 검색 플랫폼

Volumn 532-535, Issue , 2003, Pages 732-736

Ultra thin films of atomic force microscopy grown SiO2 as gate oxide on MOS structures: Conduction and breakdown behavior

(3) Blasco, Xavier a Nafría, Montserrat a Aymerich, Xavier a

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

Author keywords

Atomic force microscopy; Dielectric phenomena; Electrical transport (conductivity, resistivity, mobility, etc.); Insulating films; Metal oxide semiconductor (MOS) structures; Oxidation; Silicon oxides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; MICROELECTRONICS; MOS DEVICES; SEMICONDUCTOR GROWTH; SILICA; THERMAL EFFECTS;

THERMAL GROWTH;

ULTRATHIN FILMS;

EID: 0038183837 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(03)00152-3 Document Type: Conference Paper

Times cited : (10)

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