Nanoscale observations of the electrical conduction of ultrathin SiO2 films with conducting atomic force microscopy

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 156-162

  Porti, M ^a   Nafria M ^a   Aymerich, X ^a   Olbrich, A ^b   Ebersberger, B ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Atomic force microscopy; Conductive films; Conductivity measurement; Degradation; Electric breakdown; Electrodes; Noise measurement; Particle measurements; Physics; Testing

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRODES; PHYSICS; TESTING; ULTRATHIN FILMS;

CONDUCTING ATOMIC FORCE MICROSCOPY; CONDUCTIVE ATOMIC FORCE MICROSCOPES; CONDUCTIVITY MEASUREMENTS; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTION; EXPERIMENTAL EVIDENCE; NOISE MEASUREMENTS; PARTICLE MEASUREMENT;

CONDUCTIVE FILMS;

EID: 84949776801     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922895     Document Type: Conference Paper

References (28)

1. D. J. DiMaria, E. Cartier, D. Arnold, J. Appl. Phys., 73(7), p. 2267 (1993).
2. J. Suñé, I. Placencia, N. Barniol, E. Farrés, F. Martín, X. Aymerich, Thin Solid Films, 185, p. 347 (1990).
3. H.Watanabe, K. Fujita, M. Ichikawa, Appl. Phys. Lett., 72(16), p. 1987 (1998).
4. E. S. Daniel, J. T. Jones, O. J. Marsh, T. C. McGill., J. Vac. Sci. Technol. B, 15(4), p. 1089 (1997).
5. H. J. Wen, R. Ludeke, J. Vac. Sci. Technol. A. 16(3), p. 1735 (1998).
6. B. Kaczer, J. P. Pelz, J. Vac. Sci. Technol. B, 14(4), p. 2864 (1996).
7. H. J. Wen, R. Ludeke, J. Vac. Sci. Technol. B, 15(4), p. 1080 (1997).
8. S. J. O'Shea, R. M. Atta, M. P. Murrell, M. E. Welland, J. Vac. Sci. Technol. B, 13(5), p. 1945 (1995).
9. A. Olbrich, B. Ebersberger, C. Boit, Appl. Phys. Lett., 73, p. 3114 (1998).
10. A. Olbrich, B. Ebersberger, C. Boit, Proc. IRPS., pp. 163-168 (1998).
11. th Workshop on Dielectrics in Microelectronics, pp 58-59 (2000).
12. A. Olbrich, B. Ebersberger, C. Boit, Ph, Niedermann, W. Hänni, J. Vancea and H. Hoffmann, J. Vac. Sci. Technol. B, 17(4), p. 1570 (1999).
13. H. C. Day, D. R. Alle, Appl. Phys. Lett., 62(21), p. 2691 (1993).
14. A. E. Gordon, R. T. Fayfield, D. D. Litfin, T. K. Higman, J. Vac. Sci. Technol., B13(6), p. 2085 (1995).
15. F. Pérez-Murano, G. Abadal, N. Barniol, X. Aymerich, J. Servat, P. Gorostiza, F. Sanz, J. Appl. Phys. 78(11), p. 6797 (1995).
16. H. Watanabe, T. Baba, M. Ichikawa, J. Appl. Phys. 85(9), p. 6704 (1999).
17. R. H. Fowler, L. Nordheim, Proc. R. Soc. London. Ser A119, p. 173 (1928).
18. P. Olivo, T. N. Nguyen, B. Riccó, IEEE Trans. Elec. Dev., 20, p. 2259 (1988).
19. K.R. Farmer and R.A. Buhrman, Semicond. Sci. Technol., 4, pp. 1084-1105 (1989)
20. K.S. Ralls, W.J. Skocpol, L.D. Jackel, R.E. Howard, L.A. Fetter, R.W. Epworth and D.M. Tennant, Phys. Rev. Lett., 52(3), pp. 228-231 (1984).
21. M.E. Welland and R.H. Koch, Appl. Phys. Lett., 48, p. 724 (1986).
22. R.H. Koch and R.J. Hamers, Surf. Sci., 181, p. 333 (1987).
23. J. Suñé, I. Placencia, N. Barniol, E. Farrés and X. Aymerich, Phys. Stat. Sol. (a), 111, pp. 675-685 (1989).
24. E.Y. Wu, J. Aitken, E. Nowak, A. Vayshenker, P. Varekamp, G. Hueckel, J. McKenna, D. Harmon, L.K. Han, C. Montrose and R. Dufresne, IEDM Tech. Dig., pp. 541-544 (2000)
25. E. Harari, J. Appl. Phys., 49, p. 2478 (1978)
26. B. Neri, P. Olivo and B. Riccó, Apply. Phys. Lett., 51(25), pp. 2167-2169 (1987).
27. F. Crupi, B. Neri, S. Lombardo, IEEE Elec. Dev. Lett. 21(6), p. 319 (2000).
28. E. Miranda, J. Suñé, R. Rodriguez, M. Nafría, X. Aymerich, L. Fonseca, F. Campabadal, IEEE Trans. Elec. Dev., 47(1), p. 82 (2000).