Fabrication of AlGaN-based waveguides by inductively coupled plasma etching

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 10 B, 2004, Pages

  Li, Ning ^a   Waki, Ichitaro ^b,c   Kumtornkittikul, Chaiyasit ^a   Liang, Ji Hao ^d   Sugiyama, Masakazu ^b   Shimogaki, Yukihiro ^b   Nakano, Yoshiaki ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d STANLEY ELECTRIC CO LTD   (Japan)

Author keywords

AlGaN; All optical switch; Etching; GaN; ICP; MOW; Waveguide

Indexed keywords

ALUMINUM COMPOUNDS; DRY ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; OPTICAL SWITCHES; OPTIMIZATION; WAVEGUIDES;

ALGAN; ALL-OPTICAL SWITCH; GAS COMPONENT; MQW;

PLASMA ETCHING;

EID: 10844296784     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1340     Document Type: Article

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